simple drive requirement bv dss 100v small package outline r ds(on) 5 surface mount device i d 0.25a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 180 /w thermal data parameter storage temperature range total power dissipation 0.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.005 continuous drain current 3 , v gs @ 10v 0.2 pulsed drain current 1 1 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 0.25 parameter rating drain-source voltage 100 AP2320GN-HF g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for commercial-industrial applications. product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =0.25a - - 5 v gs =4.5v, i d =0.2a - - 9 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =0.2a - 0.2 - s i dss drain-source leakage current v ds =100v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =0.4a - 2 3.2 nc q gs gate-source charge v ds =80v - 0.5 - nc q gd gate-drain ("miller") charge v gs =10v - 0.5 - nc t d(on) turn-on delay time 2 v ds =50v - 3 - ns t r rise time i d =0.4a - 7 - ns t d(off) turn-off delay time r g =3.3 - 9.5 - ns t f fall time v gs =10v - 4.5 - ns c iss input capacitance v gs =0v - 32 51 pf c oss output capacitance v ds =25v - 9.5 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.4a, v gs =0v - - 1.5 v t rr reverse recovery time i s =1a, v gs =0v, - 27 - ns q rr reverse recovery charge di/dt=100a/s - 28 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ;400 /w when mounted on min. copper pad. AP2320GN-HF product specification 2 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123
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